PW038N10ESL - MOS N-MOSFET

Key Features

Beneficts.
Uses PingWei advanced PerfectMOS technology.
High robustness and reliability.
Extremely low on-resistance RDS(on).
Excellent QgxRDS(on) product(FOM).
Excellent Low Ciss.
Increases maximum current capability.
Low power loss, high power density.
Easy paralleling.
Qualified according to JEDEC criteria.

PW038N10ESL mos n-mosfet by PINGWEI - Datasheet Preview

Datasheet Details

Part number	PW038N10ESL
Manufacturer	PINGWEI
File Size	1.52 MB
Description	MOS N-MOSFET
Datasheet	PW038N10ESL Datasheet

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Full PDF Text Transcription (Reference)

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PW038N10ESL Perfect MOS N-MOSFET 100V, 3.2mΩ, 100A Features Beneficts • Uses PingWei advanced PerfectMOS technology • High robustness and reliability • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Excellent Low Ciss • Increases maximum current capability • Low power loss, high power density • Easy paralleling • Qualified according to JEDEC criteria Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) 100% DVDS Tested 100% AvalancheTested Product Summary VDS RDS(on)@10V typ RDS(on)@4.5V typ ID 100V 3.2mΩ 4.