• Part: PW038N10ESL
  • Description: MOS N-MOSFET
  • Category: MOSFET
  • Manufacturer: PINGWEI
  • Size: 1.52 MB
Download PW038N10ESL Datasheet PDF
PINGWEI
PW038N10ESL
PW038N10ESL is MOS N-MOSFET manufactured by PINGWEI.
Features Beneficts - Uses Ping Wei advanced Perfect MOS technology - High robustness and reliability - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - Excellent Low Ciss - Increases maximum current capability - Low power loss, high power density - Easy paralleling - Qualified according to JEDEC criteria Applications - Synchronous Rectification for AC/DC Quick Charger - Battery management - UPS (Uninterrupible Power Supplies) 100% DVDS Tested 100% Avalanche Tested Product Summary VDS RDS(on)@10V typ RDS(on)@4.5V typ ID 100V 3.2mΩ 4.2mΩ 100A DFN5x6 Package Marking and Ordering Information Part # PW038N10ESL Marking 038N10ESL Package DFN5x6 Packing Reel Size Tape Width Qty Tape&Reel 13 inches 12mm 5000pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Ta = 25°C Pulsed drain current (TC = 25°C) Avalanche energy, single pulse (L=0.5m H) Gate-Source voltage Power dissipation TC = 25°C Ta = 25°C Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Symbol VDS Value 100 Unit V ID...