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PPJD50N10AL-AU
100V N-Channel Enhancement Mode MOSFET
Voltage 100 V
Current
42 A
Features
RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard
Mechanical Data
Case: TO-252AA Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0104 ounces, 0.