PJD50N10AL-AU Description
PPJD50N10AL-AU 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42.
PJD50N10AL-AU Key Features
- RDS(ON) , VGS@10V, ID@20A<25mΩ
- RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
- Advanced Trench Process Technology
- High density cell design for ultra low on-resistance
- AEC-Q101 qualified
- Lead free in pliance with EU RoHS 2.0
- Green molding pound as per IEC 61249 standard
- Case: TO-252AA Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0104 ounces, 0.297 grams