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PPJD50N10AL
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
42 A
Features
RDS(ON) , VGS@10V, ID@20A<25mΩ RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
Case : TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0104 ounces, 0.
PJD50N10AL Datasheet
