PJD50N10AL - 100V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

RDS(ON) , VGS@10V, ID@20A.

Pan Jit International

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Datasheet Details

Part number	PJD50N10AL
Manufacturer	Pan Jit International
File Size	411.61 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	PJD50N10AL Datasheet
Additional preview pages of the PJD50N10AL datasheet.

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PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.

Published: Jan 26, 2016 |