Download PJD50N10AL Datasheet PDF
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PJD50N10AL Key Features

  • RDS(ON) , VGS@10V, ID@20A<25mΩ
  • RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
  • Advanced Trench Process Technology
  • High density cell design for ultra low on-resistance
  • Lead free in pliance with EU RoHS 2011/65/EU
  • Green molding pound as per IEC61249 Std
  • Case : TO-252 Package
  • Terminals : Solderable per MIL-STD-750, Method 2026
  • Approx. Weight : 0.0104 ounces, 0.297grams
  • Limited only By Maximum Junction Temperature

PJD50N10AL Description

PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42.