PJD50N10AL Overview
PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42.
PJD50N10AL Key Features
- RDS(ON) , VGS@10V, ID@20A<25mΩ
- RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
- Advanced Trench Process Technology
- High density cell design for ultra low on-resistance
- Lead free in pliance with EU RoHS 2011/65/EU
- Green molding pound as per IEC61249 Std
- Case : TO-252 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.0104 ounces, 0.297grams
- Limited only By Maximum Junction Temperature
