ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET

Zetex Semiconductors

Description

Part no.ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5.
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive.

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Datasheet Specifications

Part number: ZXMN2088DE6
Manufacturer: Zetex Semiconductors
File Size: 308.41 KB
Datasheet: ZXMN2088DE6_ZetexSemiconductors.pdf
Description: 20V Dual SOT23-6 N-channel enhancement mode MOSFET

Features

* low on-resistance achievable with low gate drive. Features

Applications

* Power Management functions Disconnect switches Relay driving and load switching www. DataSheet4U. com Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel G1 S2 G2 Pinout
* top view D1 S1 D2 ZXMN2088DE6TA Device marking 2088 7 8

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ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET Zetex Semiconductors

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