ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 750mΩ @ VGS = 10V 200V 780m.
and Applications This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency.

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Datasheet Specifications

Part number: ZXMN20B28K
Manufacturer: DIODES ↗
File Size: 686.52 KB
Datasheet: ZXMN20B28K_Diodes.pdf
Description: 200V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) test in production High avalanche energy pulse withstand capability Low gate drive voltage (Logic level capable) Low input capacitance Low on-resistance Fast switching speed “Green” Component

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ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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