SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s

LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

AP70N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP70N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pl


 
 

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SHINDENGEN Super Fast Recovery Rectifiers Dual S20LC20U 200V 20A FEATURES •œ Low noise •œ trr35ns •œ Small ƒÆ ƒÆjc jc •œ Dielectric strength 2kV guar

Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC

TP120H058WS 1200V GaN FET in TO-247 (source tab) Preliminary Description The TP120H058WS 1200V, 58 mΩ gallium nitride (GaN) FET is a normally-off d

V X / Mob:15919711751 ASC100N1200MT3 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide s

HD60SB60 thru HD60SB120 60A,600V-1200V 60A,600V-1200V Single Phase Glass Passivated Bridge Rectifier ■ Features  Glass passivated chip  Low reve

   
 
 
   
 
    
    
            

D458-VB D458-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D T

Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

SM2692NSC-VB SM2692NSC-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.160 at VGS = 10 V 200 0.20