200V Datasheet | Specifications & PDF Download

www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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FOR MESSRS : DATE : Mar. 1st ,2017 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX23D200VM0BAA Contents No. ITEM 1 COVER 2 RECORD OF REVISION 3 GENER

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IMZ120R140M1H IMZ120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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IKY100N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft

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IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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Features • BVCEO > 200V • Max continuous current IC = 1A • hFE > 100 @ IC = 150mA, VCE = 320mV • Lead Free, RoHS Compliant (Note 1) • Halogen and Anti

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

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VBL1204N N-Channel 200-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 200 0.038 at VGS = 15 V 0.043 at VGS = 10 V ID

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SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s

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http://www.fujielectric.com/products/semiconductor/ 7MBP200VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 200A / IPM Features • Temperature

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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IMZA120R022M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driv

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Features • BVCEO > -200V • BVECO > -2V • Continuous current IC(cont) = 2A • VCE(sat < -160mV @ -1A • RCE(sat)=130mΩ • PD = 2.4W • 2 Amps continuous cu

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Green ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -200V RDS(ON) 25Ω @ VGS = 10V ID TA = +25°C 200mA Description Th

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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Description AP100N20MP 200V N-Channel Enhancement Mode MOSFET The AP100N20MP uses advanced trench technology to provide excellent RDS(ON), low gate

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YANGZHOU POSITIONING TECH. CO., LTD ZP3500A 2200V ***************************************************************************************************

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IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po

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