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IRF650 - 200V N-Channel MOSFET

IRF650 Description

IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF650 Features

* 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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Datasheet Details

Part number
IRF650
Manufacturer
Fairchild Semiconductor
File Size
898.48 KB
Datasheet
IRF650_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF650-like datasheet