Click to expand full text
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF610
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
V V
ID Drain Current-Continuous
3.3 A
IDM Drain Current-Single Plused
8A
PD Total Dissipation @TC=25℃
43 W
Tj Max.
IRF610 Datasheet
