Datasheet4U Logo Datasheet4U.com

IRF610A - N-Channel Mosfet Transistor

Datasheet Summary

Description

purpose applications.

Features

  • Low RDS(on) = 1.25Ω(TYP).
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

📥 Download Datasheet

Datasheet preview – IRF610A

Datasheet Details

Part number IRF610A
Manufacturer Inchange Semiconductor
File Size 62.50 KB
Description N-Channel Mosfet Transistor
Datasheet download datasheet IRF610A Datasheet
Additional preview pages of the IRF610A datasheet.

📁 Similar Datasheet

  • IRF610A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF610 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF610 - Power MOSFET (Vishay)
  • IRF6100 - HEXFET Power MOSFET (International Rectifier)
  • IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF610B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF610L - Power MOSFET (Vishay)
  • IRF610S - Power MOSFET (Vishay)
  • IRF611 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by Inchange Semiconductor
  • IRF610 - N-Channel Mosfet Transistor
  • IRF611 - N-Channel Mosfet Transistor
  • IRF612 - N-Channel Mosfet Transistor
  • IRF613 - N-Channel Mosfet Transistor
  • IRF614 - N-Channel Mosfet Transistor
  • IRF620 - N-Channel Mosfet Transistor
  • IRF620A - N-Channel Mosfet Transistor
  • IRF620FI - N-Channel Mosfet Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 ±20 V V 3.
Published: |