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IRF610A

N-Channel Mosfet Transistor

IRF610A Features

* Low RDS(on) = 1.25Ω(TYP)

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Rugged Gate Oxide Technology DESCRIPTION

* Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM

IRF610A General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

IRF610A Datasheet (62.50 KB)

Preview of IRF610A PDF

Datasheet Details

Part number:

IRF610A

Manufacturer:

Inchange Semiconductor

File Size:

62.50 KB

Description:

N-channel mosfet transistor.

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TAGS

IRF610A N-Channel Mosfet Transistor Inchange Semiconductor

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