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IRF6100PBF HEXFET Power MOSFET

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Description

PD - 96012B IRF6100PbF HEXFET® Power MOSFET l l l l l l l Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Foo.
True chip-scale packaging is available from International Rectifier.

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Applications

* These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an ex- D G S FlipFET™ ISOMETRIC tremely efficient and reliable device. www. DataSheet4U. com The FlipFET™ package, is one-third the footprint of a comparable SOT

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