IRF6150 Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRF6150

Manufacturer:

International Rectifier

File Size:

118.17kb

Download:

📄 Datasheet

Description:

Power mosfet. True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique p

IRF6150 Application

• Applications These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with

TAGS

IRF6150

International Rectifier

📁 Related Datasheet

IRF6156 - Power MOSFET (International Rectifier)
l Ultra Low RSS(on) per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Ta.

IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for .

IRF610 - N-Channel Power MOSFET (Intersil Corporation)
IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF610 - Power MOSFET (Vishay)
Power MOSFET IRF610, SiHF610 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8..

IRF6100 - HEXFET Power MOSFET (International Rectifier)
l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Avail.

IRF6100PBF - HEXFET Power MOSFET (International Rectifier)
PD - 96012B IRF6100PbF HEXFET® Power MOSFET l l l l l l l Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Foo.

IRF610A - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF610A FEATURES ·Low RDS(on) = 1.25Ω(TYP) ·Lower Input Capacitance.

IRF610A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRF610B - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ.