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IRF6100 - HEXFET Power MOSFET

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Description

True chip-scale packaging is available from International Rectifier.

Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications.

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l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel VDSS -20V PD - 93930F IRF6100 HEXFET® Power MOSFET RDS(on) max 0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V ID -5.1A -4.1A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device.
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