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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF612
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±20
V V
ID Drain Current-Continuous
2.6 A
IDM Drain Current-Single Plused
6.5 A
PD Total Dissipation @TC=25℃
43 W
Tj Max.
IRF612 Datasheet
