| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix | IRF620 | MOSFET N-CH 200V 5.2A TO220AB | DigiKey | 0 | 0 |
$0
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IRF620
Inchange Semiconductor
39.08 KB
N-channel mosfet transistor.
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
*FEATURES *Low RDS(on) *VGS Rated at ±20V *Si.
licon Gate for Fast Switching Speed *Rugged *Low Drive Requirements
isc Product Specification
IRF62.
📁 Related Datasheet
IRF620 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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IRF620 IRF620FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF620 IRF620FI
s s s s
V DSS 200 V 200 V
R DS( on) < 0.8 Ω < 0.8 Ω
ID 6A 4.
IRF620 - N-Channel Power MOSFET
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IRF620
Data Sheet June 1999 File Number
1577.3
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This N-Channel enhancement mode silicon gate power field .
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Data Sheet
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IRF620
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transi.
IRF620 - Power MOSFET
(TRANSYS Electronics)
..
IRF620
Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
D
G S
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 .
IRF620 - Power MOSFET
(Vishay)
.vishay.
IRF620
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (.
IRF6201PBF - Power MOSFET
(International Rectifier)
PD - 97500A
IRF6201PbF
VDS RDS(on) max
(@VGS = 4.5V)
20 2.45 2.75 130 27
V mΩ mΩ nC A
6 6 6 *
HEXFET® Power MOSFET
' ' ' '
RDS(on.
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