IRF650B 200V N-Channel MOSFET

Fairchild Semiconductor

Description

IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRF650B
Manufacturer: Fairchild Semiconductor
File Size: 898.48 KB
Datasheet: IRF650B_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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IRF650B 200V N-Channel MOSFET Fairchild Semiconductor

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