IRF650B Datasheet, Mosfet, Fairchild Semiconductor

✔ IRF650B Features

28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capabil

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Part number:

IRF650B

Manufacturer:

Fairchild Semiconductor

File Size:

898.48 KB

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📄 Datasheet

Description:

200v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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IRF650B 200V N-Channel MOSFET Fairchild Semiconductor