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IRF60B217 - N-Channel MOSFET

IRF60B217 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF60B217，IIRF60B217 *.

IRF60B217 Features

* Static drain-source on-resistance: RDS(on) ≤9.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF60B217 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 225 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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Datasheet Details

Part number
IRF60B217
Manufacturer
INCHANGE
File Size
242.08 KB
Datasheet
IRF60B217-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF60B217-like datasheet