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isc P-Channel MOSFET Transistor
IRF6218,IIRF6218
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.15Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Reset switch for active clamp
Reset DC-DC converters ·Low gate to drain charge to reduce switching losses
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-27
IDM
Drain Current-Single Pulsed
-110
PD
Total Dissipation @TC=25℃
250
Tj
Max.