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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF630NSTRRPBF
DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9.
IRF630NSTRRPBF Datasheet
