IRF630NSTRRPBF N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF .
Drain Current. ID=9. Drain Source Voltage- : VDSS= 200V(Min). Static Drain-Source On-Resistance : RDS(on) = 0.

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Datasheet Specifications

Part number: IRF630NSTRRPBF
Manufacturer: INCHANGE
File Size: 227.43 KB
Datasheet: IRF630NSTRRPBF-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

IRF630NSTRRPBF Distributors

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IRF630NSTRRPBF N-Channel MOSFET INCHANGE

INCHANGE IRF630NSTRRPBF-like datasheet