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IRF630NSTRRPBF - N-Channel MOSFET

IRF630NSTRRPBF Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF .
Drain Current. ID=9. Drain Source Voltage- : VDSS= 200V(Min). Static Drain-Source On-Resistance : RDS(on) = 0.

IRF630NSTRRPBF Applications

* This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

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Datasheet Details

Part number
IRF630NSTRRPBF
Manufacturer
INCHANGE
File Size
227.43 KB
Datasheet
IRF630NSTRRPBF-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF630NSTRRPBF-like datasheet