IRF630NS
International Rectifier
240.87kb
Power mosfet. l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier u
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IRF630N - Power MOSFET
(International Rectifier)
PD - 94005A
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Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.
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·FEATURES ·Static drain-source on-resistance:
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PD - 94005A
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IRF630 - N-channel MOSFET
(STMicroelectronics)
IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package
TAB
TO-220
1 23
Features
Order code
VDS
IRF630
.