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IRF630NLPBF

Power MOSFET

IRF630NLPBF General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides.

IRF630NLPBF Datasheet (335.15 KB)

Preview of IRF630NLPBF PDF

Datasheet Details

Part number:

IRF630NLPBF

Manufacturer:

International Rectifier

File Size:

335.15 KB

Description:

Power mosfet.
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

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IRF630NLPBF Power MOSFET International Rectifier

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