IRF630NLPBF Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRF630NLPBF

Manufacturer:

International Rectifier

File Size:

335.15kb

Download:

📄 Datasheet

Description:

Power mosfet. Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

IRF630NLPBF Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50

TAGS

IRF630NLPBF

International Rectifier

📁 Related Datasheet

IRF630NL - Power MOSFET (International Rectifier)
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.

IRF630NL - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.

IRF630N - Power MOSFET (International Rectifier)
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.

IRF630N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRF630N，IIRF630N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.3Ω ·Enhancement mode ·Fast Switching Speed.

IRF630NPBF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

IRF630NS - Power MOSFET (International Rectifier)
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.

IRF630NS - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.

IRF630NSPBF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

IRF630NSTRRPBF - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200.

IRF630 - N-channel MOSFET (STMicroelectronics)
IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630 .