Part number:
IRF630B
Manufacturer:
Fairchild Semiconductor
File Size:
859.82 KB
Description:
200v n-channel mosfet.
IRF630B_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a
IRF630B Features
* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R
IRF630B_FairchildSemiconductor.pdf
Datasheet Details
IRF630B
Fairchild Semiconductor
859.82 KB
200v n-channel mosfet.
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