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IRF630B Datasheet - Fairchild Semiconductor

IRF630B - 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRF630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRF630B_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

IRF630B

Manufacturer:

Fairchild Semiconductor

File Size:

859.82 KB

Description:

200v n-channel mosfet.

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