IRF630B - 200V N-Channel MOSFET

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Fairchild Semiconductor

Part number	IRF630B
Manufacturer	Fairchild Semiconductor
File Size	859.82 KB
Description	200V N-Channel MOSFET
Datasheet	IRF630B Datasheet
Additional preview pages of the IRF630B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

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Published: Apr 16, 2005 |