IRF630B Datasheet - Fairchild Semiconductor

IRF630B, 200V N-Channel MOSFET

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

datasheet Preview Page 1 from Datasheet4u.com

IRF630B_FairchildSemiconductor.pdf

IRF630B Datasheet Preview — Preview of IRF630B PDF

Datasheet Details

Part number:

IRF630B

Manufacturer:

Fairchild Semiconductor

File Size:

859.82 KB

Description:

200V N-Channel MOSFET

Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRF630B Distributors

📁 Related Datasheet

IRF630 IRF630F IRF630FI IRF630FP IRF630M IRF630MFP

📌 All Tags

IRF630B 200V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRF630B-like datasheet