IRF634 Datasheet - Fairchild Semiconductor

Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10µA (Max.) @ VDS = 250V

* Lower RDS(ON): 0.327Ω (Typ.) 1 2 3 IRF634A BVDSS =