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IRF634NPbF

HEXFET Power MOSFET

IRF634NPbF Features

* 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET 1 - GATE LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 3X 1.40 (.055) 3

IRF634NPbF General Description

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, prov.

IRF634NPbF Datasheet (248.75 KB)

Preview of IRF634NPbF PDF

Datasheet Details

Part number:

IRF634NPbF

Manufacturer:

International Rectifier

File Size:

248.75 KB

Description:

Hexfet power mosfet.
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel.

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IRF634NPbF HEXFET Power MOSFET International Rectifier

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