Datasheet Details
- Part number
- IRF634NLPbF
- Manufacturer
- International Rectifier
- File Size
- 248.75 KB
- Datasheet
- IRF634NLPbF_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRF634NLPbF Description
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel.
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance.
IRF634NLPbF Features
* 4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
HEXFET 1 - GATE
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS IGBTs, CoPACK
14.09 (.555) 13.47 (.530)
2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140)
1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
3X 1.40 (.055) 3
IRF634NLPbF Applications
* The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power pa
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