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IRF634NLPbF - HEXFET Power MOSFET

IRF634NLPbF Description

PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel.
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance.

IRF634NLPbF Features

* 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET 1 - GATE LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 3X 1.40 (.055) 3

IRF634NLPbF Applications

* The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power pa

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International Rectifier IRF634NLPbF-like datasheet