IRF634NLPbF Datasheet - International Rectifier

IRF634NLPbF HEXFET Power MOSFET

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, prov.

IRF634NLPbF Features

* 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET 1 - GATE LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 3X 1.40 (.055) 3

IRF634NLPbF_InternationalRectifier.pdf