IRF634NSPbF - HEXFET Power MOSFET
l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, prov.
IRF634NSPbF Features
* 4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
HEXFET 1 - GATE
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS IGBTs, CoPACK
14.09 (.555) 13.47 (.530)
2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140)
1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
3X 1.40 (.055) 3