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IRF634NSPbF

HEXFET Power MOSFET

IRF634NSPbF Features

* 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET 1 - GATE LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 3X 1.40 (.055) 3

IRF634NSPbF General Description

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, prov.

IRF634NSPbF Datasheet (248.75 KB)

Preview of IRF634NSPbF PDF

Datasheet Details

Part number:

IRF634NSPbF

Manufacturer:

International Rectifier

File Size:

248.75 KB

Description:

Hexfet power mosfet.
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel.

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TAGS

IRF634NSPbF HEXFET Power MOSFET International Rectifier

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