IRF634B Datasheet - Fairchild Semiconductor

N-Channel BFET MOSFET

IRF634B Features

* 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

IRF634B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRF634B Datasheet (660.24 KB)

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Datasheet Details

Part number:

IRF634B

Manufacturer:

Fairchild Semiconductor

File Size:

660.24 KB

Description:

N-channel bfet mosfet.

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IRF634B N-Channel BFET MOSFET Fairchild Semiconductor

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IRF634B Features

IRF634B General Description

Datasheet Details

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Description:

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