IRF634B N-Channel BFET MOSFET

Fairchild Semiconductor

Description

IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRF634B
Manufacturer: Fairchild Semiconductor
File Size: 660.24 KB
Datasheet: IRF634B_FairchildSemiconductor.pdf
Description: N-Channel BFET MOSFET

Features

* 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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📁 Related Datasheet

IRF634 IRF634FP IRF634N IRF634NL IRF634NLPbF IRF634NPbF

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N-Channel BFET MOSFET Fairchild Semiconductor

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