IRF634B
Fairchild Semiconductor
660.24kb
N-channel bfet mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
📁 Related Datasheet
IRF634 - N-CHANNEL Power MOSFET
(STMicroelectronics)
IRF634 IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
General features
Type IRF634 IRF634FP
VDSS 250V 250V
RDS(o.
IRF634 - Power MOSFET
(International Rectifier)
.
IRF634 - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRF634 - Power MOSFET
(Vishay)
.vishay.
IRF634
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF634 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
IRF634
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package.
/ Features
,,。 Low gate charge, l.
IRF634 - N-channel mosfet transistor
(Inchange Semiconductor)
MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;.
IRF634A - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRF634A - Advanced Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,P.
IRF634A - Advanced Power MOSFET
(ART CHIP)
FEATURES
z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current.
IRF634FP - N-CHANNEL Power MOSFET
(STMicroelectronics)
IRF634 IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
General features
Type IRF634 IRF634FP
VDSS 250V 250V
RDS(o.
