IRF634N Datasheet (International Rectifier)

IRF634N, Power MOSFET

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, prov

IRF634N Features

* 05 2 ) 1 .2 2 (.04 8 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 1 .4 0 (.0 5 5 ) 3X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0