Part number:
IRF630
Manufacturer:
File Size:
447.71 KB
Description:
N-channel mosfet.
* Order code VDS IRF630 200 V
* Extremely high dv/dt capability
* Very low intrinsic capacitance
* Gate charge minimized RDS(on) max. 0.40 Ω ID 9A D(2, TAB) Applications
* Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET series
IRF630
447.71 KB
N-channel mosfet.
📁 Related Datasheet
IRF630 - N-Channel Power MOSFET
(Fairchild Semiconductor)
Data Sheet
IRF630, RF1S630SM
January 2002
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field.
IRF630 - Power MOSFET
(Vishay)
.vishay.
IRF630
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF630 - N-channel mosfet transistor
(Inchange Semiconductor)
MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS.
IRF630 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
(Advanced Power Electronics)
Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
IRF630
RoHS-pliant Product
N-CHA.
IRF630A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRF630A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V.
IRF630B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRF630B/IRFS630B
IRF630B/IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produ.
IRF630F - N-Channel MOSFET Transistor
(Inchange)
MOSFET
..
INCHANGE
IRF630F
N-channel mosfet transistor
¡¤
Features
123
With TO-220F package ¤¡ Low on-stateand thermal resista.
