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IRF630N

Power MOSFET

IRF630N Features

* IN 1 2 3 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S : 0 .93 (.03 7 ) 0 .69 (.02 7 ) M B A M 3X 0.5 5 (.0 22) 0.4 6 (.0 18) 0 .3 6 (

IRF630N General Description

l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi.

IRF630N Datasheet (240.87 KB)

Preview of IRF630N PDF

Datasheet Details

Part number:

IRF630N

Manufacturer:

International Rectifier

File Size:

240.87 KB

Description:

Power mosfet.
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc.

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IRF630N Power MOSFET International Rectifier

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