IRF630N Datasheet, Mosfet, International Rectifier

IRF630N Features

• Mosfet as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge T

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IRF630N

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. l l HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.30Ω G S Fifth Generation HEXFET ® Power MOSFETs from International Rectifier u

IRF630N Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50

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IRF630N

International Rectifier

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