IRF630NPBF

Power MOSFET

International Rectifier

IRF630NPBF General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides.

IRF630NPBF Datasheet (335.15 KB)

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Datasheet Details

Part number:

IRF630NPBF

Manufacturer:

International Rectifier

File Size:

335.15 KB

Description:

Power mosfet.
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.

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IRF630NPBF Power MOSFET International Rectifier

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IRF630NPBF General Description

Datasheet Details

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