IRF640N Datasheet, Mosfet, INCHANGE

IRF640N Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤150mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IRF640N

Manufacturer:

INCHANGE

File Size:

240.98kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IRF640N Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 I

TAGS

IRF640N

INCHANGE

📁 Related Datasheet

IRF640 - N-channel TrenchMOS transistor (NXP)
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resista.

IRF640 - N-Channel MOSFET (STMicroelectronics)
® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.

IRF640 - Power MOSFET (International Rectifier)
.

IRF640 - 200V N-Channel MOSFET (Fairchild Semiconductor)
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate po.

IRF640 - N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)
SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in hig.

IRF640 - Power MOSFET (Vishay)
IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 .

IRF640 - N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)
IRF640 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l.

IRF640 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enh.

IRF640 - N-Channel Enhancement Mode POWER MOSFET (WEITRON)
N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω.

IRF640 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Vo.