Datasheet Details
- Part number
- IRF640N
- Manufacturer
- INCHANGE
- File Size
- 240.98 KB
- Datasheet
- IRF640N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF640N Description
isc N-Channel MOSFET Transistor IRF640N，IIRF640N *.
IRF640N Features
* Static drain-source on-resistance:
RDS(on) ≤150mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Efficient and reliable device for use in a wide variety of
IRF640N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation @TC=25℃
150
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
📁 Related Datasheet
📌 All Tags