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IRF640N

N-Channel MOSFET

IRF640N Features

* Static drain-source on-resistance: RDS(on) ≤150mΩ

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Efficient and reliable device for use in a wide variety of

IRF640N Datasheet (240.98 KB)

Preview of IRF640N PDF

Datasheet Details

Part number:

IRF640N

Manufacturer:

INCHANGE

File Size:

240.98 KB

Description:

N-channel mosfet.

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TAGS

IRF640N N-Channel MOSFET INCHANGE

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