IRF640N N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor IRF640N，IIRF640N *.

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Datasheet Specifications

Part number: IRF640N
Manufacturer: INCHANGE
File Size: 240.98 KB
Datasheet: IRF640N-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤150mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Efficient and reliable device for use in a wide variety of

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

IRF640N Distributors

📁 Related Datasheet

IRF640NL IRF640NLPBF IRF640NPBF IRF640NS IRF640NSPBF IRF640

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IRF640N N-Channel MOSFET INCHANGE

INCHANGE IRF640N-like datasheet