Datasheet4U Logo Datasheet4U.com

IRF640B

200V N-Channel MOSFET

IRF640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

IRF640B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRF640B Datasheet (916.61 KB)

Preview of IRF640B PDF

Datasheet Details

Part number:

IRF640B

Manufacturer:

Fairchild Semiconductor

File Size:

916.61 KB

Description:

200v n-channel mosfet.

📁 Related Datasheet

IRF640 N-channel TrenchMOS transistor (NXP)

IRF640 N-Channel MOSFET (STMicroelectronics)

IRF640 Power MOSFET (International Rectifier)

IRF640 200V N-Channel MOSFET (Fairchild Semiconductor)

IRF640 N-Channel Enhancement Mode Power MOS Transistors (Comset Semiconductors)

IRF640 Power MOSFET (Vishay)

IRF640 N-CHANNEL MOSFET (BLUE ROCKET ELECTRONICS)

IRF640 N-Channel Power MOSFET (nELL)

IRF640 N-Channel Enhancement Mode POWER MOSFET (WEITRON)

IRF640 N-Channel MOSFET Transistor (Inchange Semiconductor)

TAGS

IRF640B 200V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRF640B Datasheet Preview Page 2 IRF640B Datasheet Preview Page 3

IRF640B Distributor