IRF640B 200V N-Channel MOSFET

Fairchild Semiconductor

Description

IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRF640B
Manufacturer: Fairchild Semiconductor
File Size: 916.61 KB
Datasheet: IRF640B_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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IRF640B 200V N-Channel MOSFET Fairchild Semiconductor

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