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IRF640FI

N-Channel Mosfet Transistor

IRF640FI Features

* Low RDS(on) = 0.180Ω(TYP)

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Rugged Gate Oxide Technology DESCRIPTION

* Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR

IRF640FI General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A.

IRF640FI Datasheet (60.17 KB)

Preview of IRF640FI PDF

Datasheet Details

Part number:

IRF640FI

Manufacturer:

Inchange Semiconductor

File Size:

60.17 KB

Description:

N-channel mosfet transistor.

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TAGS

IRF640FI N-Channel Mosfet Transistor Inchange Semiconductor

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