IRF640FI Datasheet - Inchange Semiconductor

IRF640FI, N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI .
Designed for use in switch mode power supplies and general purpose applications.

Features

* Low RDS(on) = 0.180Ω(TYP)
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~15

IRF640FI-InchangeSemiconductor.pdf