Datasheet4U Logo Datasheet4U.com

IRF640FI N-Channel Mosfet Transistor

IRF640FI Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI .
Designed for use in switch mode power supplies and general purpose applications.

IRF640FI Features

* Low RDS(on) = 0.180Ω(TYP)
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area

IRF640FI Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~15

📥 Download Datasheet

Preview of IRF640FI PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF640FI
Manufacturer
Inchange Semiconductor
File Size
60.17 KB
Datasheet
IRF640FI-InchangeSemiconductor.pdf
Description
N-Channel Mosfet Transistor

📁 Related Datasheet

  • IRF640FP - N-Channel MOSFET (STMicroelectronics)
  • IRF640 - N-channel TrenchMOS transistor (NXP)
  • IRF640B - 200V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF640L - Power MOSFET (International Rectifier)
  • IRF640N - Power MOSFET (International Rectifier)
  • IRF640NL - Power MOSFET (International Rectifier)
  • IRF640NLPBF - Power MOSFET (International Rectifier)
  • IRF640NPBF - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor IRF640FI-like datasheet