IRF640FI Datasheet, Transistor, Inchange Semiconductor

IRF640FI Features

• Transistor
• Low RDS(on) = 0.180Ω(TYP)
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Rugged Gate Oxide Technology DESCRIPTI

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IRF640FI

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Inchange Semiconductor

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📄 Datasheet

Description:

N-channel mosfet transistor.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

IRF640FI Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±

TAGS

IRF640FI

Inchange Semiconductor

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