IRF640 Datasheet, transistor equivalent, NXP

IRF640 Features

  • Transistor
  • ’Trench’ technology
  • Low on-state resistance
  • Fast switching
  • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(O

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IRF640

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NXP ↗

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📄 Datasheet

Description:

N-channel trenchmos transistor. N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power s

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Page 2 of IRF640 Page 3 of IRF640

IRF640 Application

  • Applications The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mount

TAGS

IRF640
N-channel
TrenchMOS
transistor
NXP

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