Part number:
IRF640S
Manufacturer:
File Size:
95.10 KB
Description:
N-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technolog
IRF640S
95.10 KB
N-channel trenchmos transistor.
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