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IRF530N N-channel TrenchMOS transistor

IRF530N Description

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N .
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. d.

IRF530N Features

* ’Trench’ technology
* Low on-state resistance
* Fast switching

IRF530N Applications

* d. c. to d. c. converters

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