Part number:
IRF530N
Manufacturer:
File Size:
97.03 KB
Description:
N-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope u
IRF530N
97.03 KB
N-channel trenchmos transistor.
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