IRF530N Datasheet, transistor equivalent, NXP

IRF530N Features

• Transistor
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(O

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Part number:

IRF530N

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NXP ↗

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📄 Datasheet

Description:

N-channel trenchmos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:

d.c.

IRF530N Application

• Applications
• d.c. to d.c. converters
• switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional le

TAGS

IRF530N

NXP

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