Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
Features
- ns are shown in millimeters (inches)
D2Pak Package Outline
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L
OR
IN T E R N AT IO N AL R E C T IF IE R L O GO.
IRF530NLPBF Datasheet
