Datasheet Details
| Part number | IRF530NLPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 301.73 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF530NLPBF_InternationalRectifier.pdf |
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Overview: PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.
| Part number | IRF530NLPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 301.73 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF530NLPBF_InternationalRectifier.pdf |
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l IRF530NSPbF IRF530NLPbF ® VDSS = 100V RDS(on) = 90mΩ D G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Compare IRF530NLPBF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF530NL | N-Channel MOSFET | INCHANGE |
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IRF530N | N-channel TrenchMOS transistor | NXP |
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IRF530N | N-Channel Power MOSFET | Intersil Corporation |
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IRF530N | N-Channel MOSFET | INCHANGE |
| IRF530N | Power MOSFET | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| IRF530NL | HEXFET Power MOSFET |
| IRF530N | Power MOSFET |
| IRF530NPbF | HEXFET Power MOSFET |
| IRF530NS | Power MOSFET |
| IRF530NSPBF | HEXFET Power MOSFET |
| IRF530 | Power MOSFET |
| IRF5305 | Power MOSFET |
| IRF5305L | Power MOSFET |
| IRF5305LPBF | HEXFET Power MOSFET |
| IRF5305PbF | Power MOSFET |