IRF530NL Datasheet | Inchange Semiconductor

FEATURES - With To-262 package - Low input capacitance and gate charge - Low gate input resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 17 12 Total Dissipation @TC=25℃ Tch Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER UNIT Rth(ch-c) Channel-to-case thermal resistance ℃/W IRF530NL isc website：.iscsemi.cn...