Datasheet Details
| Part number | IRF5305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.86 KB |
| Description | P-Channel MOSFET |
| Datasheet | IRF5305-INCHANGE.pdf |
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Overview: isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·.
| Part number | IRF5305 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.86 KB |
| Description | P-Channel MOSFET |
| Datasheet | IRF5305-INCHANGE.pdf |
|
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·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 110 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.4 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF5305 | Power MOSFET | International Rectifier |
|
IRF5305L | Power MOSFET | International Rectifier |
|
IRF5305LPBF | HEXFET Power MOSFET | International Rectifier |
|
IRF5305PbF | Power MOSFET | International Rectifier |
|
IRF5305S | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRF5305L | P-Channel MOSFET |
| IRF5305S | P-Channel MOSFET |
| IRF530N | N-Channel MOSFET |
| IRF530NL | N-Channel MOSFET |
| IRF530NS | N-Channel MOSFET |
| IRF520 | N-Channel MOSFET |
| IRF520N | N-Channel MOSFET |
| IRF520NL | N-Channel MOSFET |
| IRF520NS | N-Channel MOSFET |
| IRF5210 | P-Channel MOSFET |