IRF5305L
Overview
- Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF5305L |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 224.21 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF5305LPBF | International Rectifier | HEXFET Power MOSFET |
| IRF530 | Motorola Semiconductor | N-Channel MOSFET |
| IRF530 | STMicroelectronics | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530S | International Rectifier | Power MOSFET |
| IRF530R | Harris Semiconductor | N-Channel Power MOSFETs |