IRF530 Datasheet PDF

DESCRIPTION

This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is Palso intended for any applications with low gate drive terequirements. leAPPLICATIONS os HIGH CURRENT, HIGH SWITCHING SPEED bss SOLENOID AND RELAY DRIVERS Os REGULATOR -s DC-DC & DC-AC CONVERTERS t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, cABS, AIR-BAG, LAMPDRIVERS, etc.) roduABSOLUTE

MAXIMUM RATINGS

Symbol Parameter PVDS Drain-source Voltage (VGS = 0) teVDGR Drain-gate Voltage (RGS = 20 kΩ) leVGS Gate- source Voltage soID Drain Current (continuous) at TC = 25°C Ob ID Drain Current (continuous) at TC = 100°C 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 20 14 10 Unit V V V A A IDM(●) Drain Current (pulsed) 56 A Ptot Total...