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IRF530 Datasheet

The IRF530 is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF530
ManufacturerInternational Rectifier
Overview . .
Part NumberIRF530
DescriptionPower Field Effect Transistor
Manufactureronsemi
Overview IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commuta. ing Symbol Drain
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MΩ) Gate
*to
*Source Voltage
* Continuous Gate
*to
*Source Voltage
* Single Pulse (tp ≤ 50 mS) Drain Current
* Continuous Drain Current
* Continuous @ 100°C Drain Current
* Single Pulse (tp ≤ 10 mS) Total Power Dissipation @ TC = 25°C.
Part NumberIRF530
DescriptionN-Channel Power MOSFET
ManufacturerFairchild Semiconductor
Overview Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil C.
* 14A, 100V
* rDS(ON) = 0.160Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G .
Part NumberIRF530
DescriptionN-Channel MOSFET
ManufacturerMotorola Semiconductor
Overview . .

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