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IRF530N - N-Channel Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (FLANGE) Symbol D Ordering Information PART NUMBER IRF530N G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) Symbol D Ordering Information PART NUMBER IRF530N G PACKAGE TO-220AB BRAND IRF530N S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF530N UNITS V V V A A 100 100 ±20 22 15 Figure 4 Figures 6, 14, 15 85 0.57 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .