IRF530NL Datasheet | International Rectifier

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D2Pak IRF530NS TO-262 IRF530NL Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current ‡ Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - ‡ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 60 3.8 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) Units W W W/°C V A m J V/ns °C Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)- - Typ. - - - - - - Max. 2.15 40 Units °C/W .irf. 1 09/04/02 IRF530NS/IRF530NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS...