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IRF530NPBF
IRF530NPBF Datasheet
www.VBsemi.com
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) (Ω)
100
0.127at VGS = 10 V
ID (A) 18
TO-220AB D
FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested
APPLICATIONS • Isolated DC/DC Converters
RoHS
COMPLIANT
G
GD S Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Single Pulse Avalanche Energyb
L = 0.
IRF530NPBF Datasheet
