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IRF530NPBF Datasheet

The IRF530NPBF is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF530NPBF
ManufacturerVBsemi
Overview IRF530NPBF IRF530NPBF Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V ID (A) 18 TO-220AB D FEATURES • TrenchFET® Power .
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* 100 % Rg Tested APPLICATIONS
* Isolated DC/DC Converters RoHS COMPLIANT G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Volt.
Part NumberIRF530NPBF
DescriptionHEXFET Power MOSFET
ManufacturerInternational Rectifier
Overview Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. rain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
* Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M.

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