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IRF530N Datasheet

The IRF530N is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRF530N
ManufacturerIntersil
Overview IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, V.
* Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
* Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com
* Peak Current vs Pulse Width Curve
* UIS Rating Curve DRAIN (FLANGE) Symbol D Ordering Informa.
Part NumberIRF530N
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Te.
Part NumberIRF530N
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.09Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on) ≤0.09Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=.
Part NumberIRF530N
DescriptionPower MOSFET
ManufacturerFairchild Semiconductor
Overview Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF530N D G S Features • Ultra Low On-Resistance.
* Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V
* Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com
* Peak Current vs Pulse Width Curve
* UIS Rating Curve Ordering Information PART NUMBER PA.

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