Datasheet Details
| Part number | IRF5305PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 182.78 KB |
| Description | Power MOSFET |
| Datasheet | IRF5305PbF-InternationalRectifier.pdf |
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Overview: Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel G Fully Avalanche Rated.
| Part number | IRF5305PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 182.78 KB |
| Description | Power MOSFET |
| Datasheet | IRF5305PbF-InternationalRectifier.pdf |
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|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Compare IRF5305PbF distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF5305 | P-Channel MOSFET | INCHANGE |
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IRF5305L | P-Channel MOSFET | INCHANGE |
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IRF5305S | P-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRF5305 | Power MOSFET |
| IRF5305L | Power MOSFET |
| IRF5305LPBF | HEXFET Power MOSFET |
| IRF5305S | Power MOSFET |
| IRF5305SPBF | HEXFET Power MOSFET |
| IRF530 | Power MOSFET |
| IRF530L | Power MOSFET |
| IRF530N | Power MOSFET |
| IRF530NL | HEXFET Power MOSFET |
| IRF530NLPBF | HEXFET Power MOSFET |