IRF5305S
Overview
- Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF5305S |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 248.55 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF530FP | STMicroelectronics | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| IRF530N | NXP Semiconductors | N-channel TrenchMOS transistor |
| IRF530 | Harris Corporation | N-Channel MOSFET |
| IRF532 | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF532R | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |