IRF530 Key Features
- Low RDS(on) -VGS Rated at ±20V -Silicon Gate for Fast Switching Speed -Rugged -Low Drive Requirements -Minimum Lot-to-Lo
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
IRF530 | N-Channel MOSFET |
STMicroelectronics |
IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
International Rectifier |
IRF530 | Power MOSFET |
| IRF530 | N-Channel Power MOSFET | |
Harris Corporation |
IRF530 | N-Channel MOSFET |