IRF530
Key Features
- VGS Rated at ±20V
- Silicon Gate for Fast Switching Speed
- Low Drive Requirements
- Minimum Lot-to-Lot variations for robust device
Applications
- Designed especially for high voltage,high speed applications
- Part: IRF530
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 235.10 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF530R | Harris Semiconductor | N-Channel Power MOSFETs |
| IRF532 | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF533 | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF532R | Harris Corporation | N-Channel Power MOSFETs Avalanche Energy Rated |
| IRF530 | onsemi | Power Field Effect Transistor |
| IRF530NS | Inchange Semiconductor | N-Channel MOSFET |
| IRF531 | Supertex Inc | N-Channel Enhancement-Mode Vertical DMOS Power FET |
| IRF532 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF533 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF531 | Harris Corporation | N-Channel Power MOSFET |